Bhubaneswar, Sept. 16 (UDN): Odisha has secured a major boost to its semiconductor ambitions with the approval of a Rs 3,406.25-crore silicon carbide (SiC) semiconductor manufacturing facility in Khordha district. The project has been cleared by the Unit Approval Committee (UAC) of Falta Special Economic Zone (SEZ) and is expected to strengthen the state’s position in India’s growing high-tech manufacturing sector.
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The facility will be set up by SiCSem Private Limited, a Tamil Nadu-based company, at IDCO Infovalley-II in Khordha. The approval was granted during the 217th meeting of the UAC, with the project operating under the jurisdiction of Falta SEZ.
Focus on advanced SiC semiconductor devices
The proposed plant will span 21.889 acres and manufacture silicon carbide diodes and SiC MOSFETs, components widely used in electric vehicles, renewable energy systems, industrial automation and high-power electronics.
Once operational, the facility is expected to produce 4.8 million SiC diodes and 91.2 million SiC MOSFETs annually, adding significant domestic capacity in advanced power semiconductor manufacturing.
Funding structure
The project combines support from both the Centre and the state government, alongside private investment.
Total investment: Rs 3,406.25 crore
Central government capital subsidy: Rs 700 crore
Odisha government support: Rs 350 crore
Promoter’s investment: Rs 1,956.25 crore
Strong export potential
The company projects an export turnover of Rs 7,043 crore over the first five years of operations. It is also expected to generate around Rs 4,523 crore in net foreign exchange earnings, reinforcing India’s push to expand exports of high-value technology products.
Strengthening Odisha’s semiconductor ecosystem
The approval marks another milestone in Odisha’s efforts to emerge as a semiconductor manufacturing hub. The investment is expected to enhance the state’s industrial ecosystem by attracting advanced manufacturing, technology-driven investments and export-oriented industries.
The project also aligns with India’s broader strategy to build domestic semiconductor capabilities and reduce dependence on imported critical electronic components, particularly in the fast-growing power electronics segment.aaPresident Shri Sadananda Sahu
Vice President Shri Basudev Sahoo
Vice President Shri Bichitrananda Sahoo
General Secretary Shri Subas Chandra Sahoo
Joint Secretary Shri Bijay Chandra Sahoo
Joint Secretary Shri Shiba Pada Sahoo
Treasurer Shri Dhruba Charan Sahoo
Auditor Shri Uttam Charan Sahoo
& other executive body members present there, & also old members and some new member added and also distributed id cards to all members & discussed most important rule and regulations of Madhubaishya samaj, and also planned to focus on Govt to recognise this madhubaishya samaj, today all day rainning , still majority of memebers appritiate , all are happy to attend this meeting, lastly all are got prasad , then meeting wind up..